PART |
Description |
Maker |
KM23C64000G |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
MX26L6420XAI-12 MX26L6420MI-90 MX26L6420TI-90 MX26 |
64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM MICA RoHS Compliant: No 64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM 4M X 16 FLASH 3V PROM, 120 ns, PDSO44
|
Macronix International Co., Ltd. http://
|
MBM29LV651UE12TR MBM29LV651UE90TR MBM29LV651UE-12 |
64M (4M x 16) BIT 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 64M (4M x 16) BIT 64M号(4米16)位 AGM3224D equivalent, 320 x 240 pixel format 4M X 16 FLASH 3V PROM, 120 ns, PDSO48 DC-DC Converter; Supply Voltage:12V; Output Voltage:3.3V; Number of Outputs:1; Power Rating:20W; Mounting Type:PC Board; Series:WPN20R 320 x 240 pixel format, LED or CFL Backlight
|
Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited. Fujitsu Component Limit...
|
IBM13N64734HCA |
64M x 72 Two-Bank Unbuffered SDRAM Module(64M x 64 2组不带缓冲同步动态RAM模块) 64米72双行缓冲内存模组4米64 2组不带缓冲同步动态内存模块)
|
International Business Machines, Corp.
|
K9K1G16U0A |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory 128M的8 64米16位NAND闪存
|
Samsung Semiconductor Co., Ltd.
|
K9F1208D0A K9F1208U0A K9F1216U0A |
(K9F1208x0A / K9F1216x0A) 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
|
Samsung semiconductor
|
UPD4664312F9-BE75X-CR2 UPD4664312F9-B65X-CR2 UPD46 |
64M-bit(4M-word x 16-bit)MOBILE SPECIFIED RAM
|
NEC
|
MBM29LV650UE-90 MBM29LV651UE90TR 29LV650 MBM29LV65 |
64M (4M x 16) BIT
|
FUJITSU[Fujitsu Media Devices Limited]
|
MBM29LV652UE90PBT MBM29LV652UE MBM29LV652UE-12 MBM |
64M (4M X 16) BIT
|
FUJITSU[Fujitsu Media Devices Limited]
|